MSF16N50 50 0v n - channel mosfet publication order number: [ MSF16N50 ] ? bruckewell technology corporation rev. a - 2014 description the msf 16n50 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all c om mercial - industrial applications features ? rds(on) (typical 0.33 )@vgs=10v ? gate charge (typical 60nc) ? improved dv/dt capability, high ruggedness ? 100% avalanche tested ? maximum junction temperature range (150 c ) ? rohs compliant package application ? switching mode power supply ? lcd panel power ? adapter ? e - bik e charger packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds s drain - source voltage 50 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 16 a drain current - continuous (tc= 100 c ) 10 a i dm drain current pulsed 64 a e as s ingle pulsed avalanche energy 995 mj e ar repetitive avalanche energy 2 4.5 mj dv/dt peak diode rec overy dv/dt 4 .5 v/ns
MSF16N50 50 0v n - channel mosfet publication order number: [ MSF16N50 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit p d power dissipation ( tc = 25 c) derate above 25 c 205 w 2.1 w/ c t j ,t stg operating and storage temperature range - 55 to +150 c t l max imum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c ? drain current limited by maximum junction temperature thermal characteristics (tc=25c unless otherwise noted) symbol parameter max. unit s r jc junction - to - case 2.8 c /w r ja junction - to - ambient 62.5 on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds =v gs ,i d =250a ds(on) static drain - source on - resistance v gs =10v,i d = 8 a -- 0.33 0.38 off characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs =0 v , i d =250a 5 00 -- -- v b v dss / t j breakdown voltage temperature coefficient i d =250a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 5 0 0v , v gs = 0 v v ds = 4 0 0v , t c = 125 c -- -- 1 0 10 0 a i gss f gate - body leakage current, forward v gs = 3 0v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0v , v d s = 0 v -- -- - 100 n a dynamic c haracteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz -- 2300 -- pf c oss output capacitance -- 330 -- pf c rss reverse transfer capacitance -- 35 -- pf
MSF16N50 50 0v n - channel mosfet publication order number: [ MSF16N50 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 25 0 v, i d = 16 a, r g = 25 -- 5 -- ns t r turn - on time -- 180 -- ns t d(off) turn - off delay time -- 130 -- ns tf turn - off fall time -- 100 -- ns q g total gate charge v ds = 400 v,i d = 16a , v gs = 10 v -- 60 -- nc q gs gate - source charge -- 14 -- nc q g d gate - drain charge -- 28 -- nc source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 16 a i sm ism pulsed source - drain diode forward current -- -- 64 v sd source - drain diod e forward voltage i s = 1 6 a , v gs = 0v -- -- 1. 5 v t rr reverse recovery time i s = 16 a , v gs = 0v dif/dt=100a/s -- 340 -- ns q rr reverse recovery charge -- 3.4 -- c notes: 1. repeativity rating : pulse width limited by junction temperature 2. l = 5.0mh, ias =16.0a, vdd = 50v, rg = 25 , starting tj = 25c 3. isd 16.0a, di/dt 200a/us, vdd bvds s, starting tj = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
MSF16N50 50 0v n - channel mosfet publication order number: [ MSF16N50 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliabi lity, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleten ess contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. t o the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. ( iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typ ical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a parti cular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. produc t specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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